SRC60R068B MOSFET

Product description:

68mΩ, 600V, Super Junction N-Channel Power MOSFET The SRC60R068B is a high voltage power MOSFET fabricated using advanced super junction technology. The resulting device has extremely low resistance, low gate charge, and fast switching time, making it especially suitable for applications that require superior power density and outstanding efficiency.

The SRC60R068B breakdown voltage is 600V and has a high rugged avalanche characteristic.

Features:

Ultra Low RDS(ON) = 68mΩ @ VGS = 10V.

Ultra Low Gate Charge, Qg=182nC typ.

Fast switching capability

Robust design with better EAS performance

EMI Improved

Application:

Telecom power

EV charger

High power application